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Through Hole 50-1000V 1 Amp DO-41 silicon rectifier diode

Guangdong Huixin Electronics Technology Co., Ltd.
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Through Hole 50-1000V 1 Amp DO-41 silicon rectifier diode

Brand Name : Huixin

Model Number : FR104 DO-41

Certification : ISO14001 ISO9001 ISO/TS16949 UL

Place of Origin : China

MOQ : 5000 PCS

Price : Negotiable

Payment Terms : T/T, Paypal, Cash

Supply Ability : 1 billion pieces/ Month

Delivery Time : 2-4Weeks

Packaging Details : 5000pcs/reel/box

Type : Plastic Fast Recover Rectifier

Package : DO-41

Package Type : Through Hole

MPQ : 5000PCS

Samples : Free

Sample Time : 5-7 Days

Lead Time : 2-4Weeks

Lead Free Status : RoHS

Current : 1.0Amp

Voltage : 400V

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1 Amp Silicon Rectifier 50 to 1000 Volts Fast Recovery Rectifiers

Rectifier Diode Switching 400V 1A 150ns 2-Pin DO-41

FR101~FR107 DO-41 Datasheet.pdf

Features:

  • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
  • Open Junction chip
  • High forward surge current capability
  • High temperature soldering guaranteed
  • Low reverse current
  • Low forward voltage drop
  • Fast switching for high efficiency

Mechanical Data:

  • Case : DO-41 Molded plastic body
  • Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
  • Polarity : Color band denotes cathode end
  • Mounting Position : Any
  • Weight : 0.0088 ounce, 0.25 grams

Maximum Ratings And Electrical Characteristics:

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Parameter SYMBOLS FR101 FR102

FR103

FR104 FR105 FR106 FR107 UNITS
Maximum Repetitive Peak Reverse Voltage VRRM 50 100

200

400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70

140

280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100

200

400 600 800 1000 Volts
Maximum Average Forward Rectifier Current at TL=100°C IF(AV) 1 Amps
Peak Forward Surge Current ,8.3msSingle Half Sine-Wave Superimposed on rated load IFSM 30 Amps
Maximum Instantaneous Forward Voltage At 1A VF 1.3 Volts
Maximum DC Reverse Current at rated DC blocking voltage TA=25°C IR 10 μA
TA=125°C 500
Maximum Reverse Recovery Time Trr 150 250 500 ns
Typical Junction Capacitance CJ

12

PF

Note: 1.Reverse recovery condition IF =0.5A,IR =1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.


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Through Hole 50-1000V 1 Amp DO-41 silicon rectifier diode


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DO-41 Silicon Rectifier Diode

      

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